In2te3 ferroelectric
WebOct 12, 2016 · A series of In 2 Te 3 thin films with various thicknesses was prepared on fused quartz substrate using a radio-frequency magnetron sputtering method. After … WebHere, the ferroelectric semiconducting nature of alpha-In 2 Se 3 is utilized to design vdWHs based on two-dimensional transition metal dichalcogenides (TMDs)/alpha-In 2 Se 3 , where TMDs are used...
In2te3 ferroelectric
Did you know?
WebThe stable ferroelectricity of 2D α In 2 Se 3 is attributed to its unique re-bonding mechanism and the locking between polarizations in the OOP and IP directions, rather than the long-range Coulomb interactions in conventional displacement-type ferroelectrics. The In2Se3 films were transferred from mica to TEM grids or other substrates by the poly (methyl methacrylate) (PMMA) method. The PMMA solution was first spin coated onto mica at 3,000 rpm for 60 s and then heated at 100 °C for 5 min. Second, the PMMA was spin coated again to the mica at 1,000 rpm for 60 … See more In a typical CVD process, 6 mg In2O3 (99.99%, Alfa) and three fresh mica sheets were loaded into the quartz boat and placed in downstream zone 2 (T2 = 560–760 °C; heating … See more The InSe crystals were synthesized by heating In2Se3 powder (99.99%, Innochem) at 950 °C for 30 min under H2/N2 mixed gas (30 s.c.c.m.). Then, the InSe powder was obtained by grinding the InSe crystals. In the … See more The In2Se3 films were characterized by OM (Leica, DM2700M and DM1750M), atomic force microscopy (Hitachi 5300E), piezoresponse force microscopy (Asylum Research MFP-3D … See more The metastable β′-In2Se3 can be transformed into a more stable α phase by releasing the strain. We release the strain of β′-In2Se3 films by … See more
WebDec 21, 2015 · The Bi2Te3/In2Te3 interface is determined as coherent, and the crystallographic orientation between the two phases is determined as «2¯11»In2Te3//«11¯00»Bi2Te3, {111}In2Te3// {0001}Bi2Te3. No... WebApr 7, 2024 · The device potential of these 2D ferroelectric materials is further demonstrated using the examples of van der Waals heterostructures of In 2 Se 3 /graphene, exhibiting a tunable Schottky barrier ...
WebJul 13, 2024 · Here, we show in-plane ferroelectricity in β′ phase In 2 Se 3, a different In 2 Se 3 polymorph. Previously, the β′ phase was believed to be metastable and only existed … WebJul 6, 2024 · Indium selenide (α-In 2 Se 3) is a III 2 –VI 3 binary chalcogenide material with a bandgap in the range of 1.39–1.45 eV [].The excellent electrical and optical properties of α-In 2 Se 3 render it a good candidate for photodetection applications [2,3,4,5].Moreover, α-In 2 Se 3 samples, including atom-thick α-In 2 Se 3 layers, exhibit ferroelectric properties at …
WebFeb 18, 2024 · By using first-principles calculations, we predict that hole-doping can induce robust ferromagnetism in 2D ferroelectric {\alpha}-In2Se3 due to its unique flat band …
WebIn the present study, 2D In 2 Se 3 flakes down to monolayers are grown by the chemical vapor deposition (CVD) technique on a mica substrate with their structural, optical and ferroelectric properties being studied. The effect of growth parameters (time of growth and Ar flow rate) on the shape and size of the deposited flakes was studied. crystal\u0027s ikWebOct 6, 2024 · Generally, the strain resulting from the lattice mismatch may affect the electronic structures of the graphene/In 2 Te 3 heterostructures. For comparison, the … dynamic joystick controllerWebWhen the out-of-plane ferroelectric polarization field is pointing from In 2 Se 3 towards MoS 2, the energy band of the heterostructure is type-II band alignment with a band gap of 0.8 eV, which is beneficial for carrier separation. With reversal of the ferroelectric polarization, the band alignment switches from type-II to type-I with a band ... crystal\u0027s isWebOct 6, 2024 · In the In 2 Te 3 monolayer, each unit cell consists of two In atoms and three Te atoms, which are arranged in the sequence of Te–In–Te–In–Te [ 38, 45 ]. The calculated lattice parameters of the In 2 Te 3 monolayer are determined to be a = b = 4.37 Å, which also coincides well with previous findings [ 38 ]. crystal\\u0027s ipWebAug 1, 2024 · The reversible polarization of ferroelectric semiconductor In 2 Se 3 can be used to realize the tunable photoelectric properties of the heterostructures. In this work, we construct the two-dimensional (2D) Janus WSSe/In 2 Se 3 van der Waals heterostructures (vdWHs), where Janus WSSe monolayer has an intrinsic out-of-plane dipole moment. First … dynamic kent.co inWebOct 6, 2024 · It is revealed that the electronic structures of graphene and In 2 Te 3 monolayer are well preserved upon contact. The transition between the n-type Ohmic and p-type Schottky contacts can be realized for the graphene/In 2 Te 3 heterostructures by switching the polarity of In 2 Te 3. crystal\\u0027s inWebA theoretical design for an ON–OFF switchable HER catalyst using the two-dimensional ferroelectric (2D-FE) III 2 VI 3 compound In 2 Se 3 is reported in this paper. With vertical stacking of the basal plane of In 2 Se 3 on top of the transition metal cobalt, a set of ab initio calculations reveals that the reversible polarization switching of In 2 Se 3 can turn the … dynamic json object typescript